bc327 series 5 features general purpose amplifier applications pnp epitaxial silicon, planar design collector current i c = -800ma mechanical data case: to-92 terminals: solderable per mil-std-202, method 208 device marking: bc327-16: 7a bc327-25: 7b bc327-40: 7c absolute maximum ratings parameter symbol value unit collector - emitter voltage v ce0 -45 v collector - base voltage v cb0 -50 v emitter - base voltage v eb0 -5.0 v collector current - continuous i c -800 ma max power dissipation (note 1) p tot 625 mw junction and storage temperature range t j , t stg -55 to 150 thermal characteristics parameter symbol value unit thermal resistance , junction to ambient (note 1) r j a 200 /w note 1: transistor mounted on fr-5 board 1.0 x 0.75 x 0.062 in. pnp general purpose transistors voltage power 45 625mw to-92 1 2 3 to-92 1 2 3 3 2 base 1 collector emitter base 1 collector emitter
electrical characteristics (t j =25 c, unless otherwise noted) parameter symbol min. typ. max. unit collector - emitter breakdown voltage (i c =-10ma, i b =0) v (br) ce0 -45 - - v collector - emitter breakdown voltage (v eb =0v, i c =-100ua) v (br) ces -50 - - v emitter - base breakdown voltage (i e =-10ua, i c =0) v (br) eb0 -5.0 - - v emitter-base cutoff current (v eb =-4v) i ebo - - -100 na collector-base cutoff current (v cb =-30v, i e =0) i cbo - - -100 na collector cutoff current (v ce =-45v, v be =0) i ces - - -100 na dc current gain bc337-16 (i c =-100ma,v ce =-1v) bc337-25 bc337-40 (i c =-300ma, v ce =-1v) h fe 100 160 250 40 - - - - 250 400 630 - - collector ? emitter saturation voltage (i c =-500ma, i b =-50ma) v ce(sat) - - -0.7 v base ? emitter voltage (i c =-300ma, v ce =-1.0v) v be(on) - - -1.2 v collector - base capacitance (v cb =-10v, i e =0, f=1mhz) c cbo - 5.0 - pf current gain ? bandwidth product (i c =-10ma, v ce =-5v, f=100mhz) f t - 210 - mhz electrical characteristics curves fig. 4. typical capacitances fig. 3. bc337-40 typical h fe vs. i c 10 100 1000 0.01 0.1 1 10 100 1000 colle ctor curre nt, i c (m a) hf e t j = 25c t j = 150c t j = 100c v ce = 1v 10 100 1000 0.01 0.1 1 10 100 1000 colle ctor curre nt, i c (m a) hf e t j = 25c t j = 150c t j = 100c v ce = 1v fig. 2. bc337-25 typical h fe vs. i c 10 100 1000 0.01 0.1 1 10 100 1000 colle ctor curre nt, i c (m a) hf e t j = 25c t j = 150c t j = 100c v ce = 1v fig. 1. bc337-16 typical h fe vs. i c 1 10 100 0.1 1 10 100 reverse voltage, v r (v) capacitance, c (p f c ib (eb) c ob (eb)
to-92 package outline order information bc327-xx b ? bulk 5,000 per box bc327-xx t/r ? tape and reel, 2,000 per reel bc327-xx a/b ? ammo pack, 2,000 per ammo pack copyright panjit international, inc 2005 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. to-92 to-92
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